Method of forming conductive path by low power laser pulse

Details Method of forming conductive path by low power laser pulse Method of forming conductive path by low power laser pulse

1986-05-06

1989-03-07

Roy, Upendra

Fishing, trapping, and vermin destroying

357 91, 437 46, 437171, H01L 21265

Patent

active

048106631

ABSTRACT:
An integrated circuit device including a link point for electrically connecting a plurality of metal layers, comprising a first metal layer, a link insulating layer and a second metal layer. Diffusion barrier may be employed between the link insulator layer and each of the first metal layer and the second metal layer. The metal layers are connected by exposing the link point to a low-power laser for a relatively long pulse width.

REFERENCES:
patent: 3771026 (1973-11-01), Asai et al.
patent: 4023005 (1977-05-01), Bolin
patent: 4151545 (1979-04-01), Schnepf et al.
patent: 4168444 (1979-09-01), van Santen
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4190855 (1980-02-01), Inoue
patent: 4259367 (1981-03-01), Dougherty, Jr.
patent: 4270137 (1981-05-01), Coe
patent: 4270960 (1981-06-01), Bollen et al.
patent: 4272775 (1981-06-01), Compton et al.
patent: 4275410 (1981-06-01), Grinberg et al.
patent: 4289834 (1981-09-01), Alcorn et al.
patent: 4318752 (1982-03-01), Tien
patent: 4335362 (1982-06-01), Salathe et al.
patent: 4372989 (1983-02-01), Menzel
patent: 4387503 (1983-06-01), Aswell et al.
patent: 4398343 (1983-08-01), Yamazaki
patent: 4413272 (1983-11-01), Mochizuki et al.
patent: 4437109 (1984-03-01), Anthony et al.
patent: 4438450 (1984-03-01), Sheng et al.
patent: 4446613 (1984-05-01), Beinglass et al.
patent: 4456490 (1984-06-01), Duttal et al.
patent: 4462150 (1984-07-01), Nishimura et al.
patent: 4467312 (1984-08-01), Komatsu
patent: 4479829 (1984-10-01), Kniekamp
patent: 4565712 (1986-01-01), Noguchi et al.
patent: 4581620 (1986-04-01), Yamazaki et al.
Aggarwal, B. K., IBM-TDB, 21 (1979) 3271.
Drowley et al., A Comparison of CW Laser and Electron-Beam Recrystallization of Polysilicon in Multilayer Structures, Laser-Solid Interactions and Transient Thermal Processing of Materials, Ed (J. Narayan et al.), North-Holland, N.Y., 1982, p. 529.
O. Minato, et al., "A High-Speed Hi-CMOSII 4K Static RAM", pp. 449-453, IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, Oct. 1981.
J. M. Harris et al., "Solid-Phase Crystallization of S Films in Contact with Al Layers", pp. 2897-2904, Journal of Applied Physics, vol. 48, No. 7, Jul., 1977.
M. Hongo, et al., THD2 "Connecting Conductors on Semiconductor Devices by Lasers", Hitachi, Ltd. 4/15/82.
J. G. Posa, "Redundancy-What to do When the Bits go Out", 7/28/81, pp. 117-120, Electronics.
G. H. Chapman et al., "A Laser Linking Process for Restructurable VLSI*", MIT, CLEO '82, 4/14-16/82, Phoenix, Ariz.
J. F. Smith et al., "Laser Induced Personalization & Alterations of LSI & VLSI Circuits", IBM Corporation.
E. E. Conrad, "Aluminum-Copper-Silicon Semiconductor Metallurgy", IBM Technical Disclosure Bulletin, vol. 13 (1971), p. 3661.
J. Leff, "Aluminum-Silicon Conductor Formation", IBM Technical Disclosure Bulletin, vol. 12 (1970), p. 1996.
Raffel et al. in International Electron Device Meeting, Dec. 1980, p. 132.

Affiliated with

Also associated with

Rating

Method of forming conductive path by low power laser pulse does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming conductive path by low power laser pulse, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming conductive path by low power laser pulse will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1668544