Method of forming conductive noble-metal-insulator-alloy barrier

Details Method of forming conductive noble-metal-insulator-alloy barrier Method of forming conductive noble-metal-insulator-alloy barrier

1994-08-01

1997-04-22

Quach, T. N.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438240, 438763, 438785, 438778, 438 2, H01L 21283

Patent

active

056228937

ABSTRACT:
A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.

REFERENCES:
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5348894 (1994-09-01), Gnade et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5471364 (1995-11-01), Summerfelt et al.
patent: 5478772 (1995-12-01), Fazan
2244 Research Disclosure, No. 345, 1 Jan. 1993, p. 79, paragraph 1-2, XP 000336532, "Oxidation and Diffusion Resistance Structure for Capacitor Structure".

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