Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-11-04
1985-08-06
Ozaki, George T.
Metal working
Method of mechanical manufacture
Assembling or joining
29589, 29590, 29591, 148174, 427 91, 427343, H01L 21285
Patent
active
045327025
ABSTRACT:
A method of fabrication of an electrical connection between two vertically spaced conducting layers in an integrated circuit structure. The first conducting layer is a selected area of the semiconductive substrate which is otherwise covered with a dielectric layer. The exposed selected area of the semiconductive substrate is treated with an activation agent and a selected conductor is chemically vapor deposited upon the activated selected area of the semiconductive substrate. The selected conductor interconnect is built up in successive chemical vapor deposition steps preceded by activation treatment of the exposed top surface until the conductor interconnect is approximately equal to the thickness of the dielectric layer and has a highly planar surface upon which can be readily deposited the second conductive layer which is thus interconnected to the semiconductor substrate.
REFERENCES:
patent: 4343676 (1982-08-01), Tarng
patent: 4392298 (1983-07-01), Barker et al.
patent: 4458410 (1984-07-01), Sugaki et al.
Miller et al., Solid State Technology, Dec. 1980, pp. 79-82.
Ghoshtagore Rathindra N.
Gigante Joseph R.
Ozaki George T.
Sutcliff Walter G.
Westinghouse Electric Corp.
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