Method of forming conductive interconnect structure

Details Method of forming conductive interconnect structure Method of forming conductive interconnect structure

1994-05-02

1995-08-15

Quach, T. N.

Fishing, trapping, and vermin destroying

437193, 437200, 437228, 437229, 437241, 148DIG1, 148DIG12, H01L 21283, H01L 21314

Patent

active

054419140

ABSTRACT:
In one embodiment, delamination of a patterned silicon nitride anti-reflective layer (26) from an underlying patterned tungsten silicide layer (32), is prevented by forming a thin silicon layer (30) between the patterned tungsten silicide layer (32) and the overlying patterned silicon nitride anti-reflective layer (26).

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