Method of forming compound semiconductor device

Details Method of forming compound semiconductor device Method of forming compound semiconductor device

1994-11-08

1998-06-09

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117103, 117108, 438265, 438293, C30B 2302

Patent

active

057627061

ABSTRACT:
The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insulating mask in a state that the compound semiconductor layer is covered with the insulating mask, on the surface of the compound semiconductor layer exposed from the insulating mask.

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patent: 4960720 (1990-10-01), Shimbo
patent: 5091335 (1992-02-01), Grunthaner et al.
patent: 5171399 (1992-12-01), Brennan et al.
patent: 5399521 (1995-03-01), Celii et al.
Hiruma et al; Journal of Crystal Growth, V. 102; pp. 717-724.
Shimoyama et al; Institute of Applied Physics Applied Electronic Physical Properties Subcommittee Meeting Research Paper (AP922227); No. 445, pp. 15-20.
Ishikawa et al; Applied Physics; vol. 2; No. 2; pp. 102-112.

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