Method of forming completely metallized via holes in semiconduct

Details Method of forming completely metallized via holes in semiconduct Method of forming completely metallized via holes in semiconduct

1988-05-10

1989-02-28

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

C25D 502

Patent

active

048082732

ABSTRACT:
A method is disclosed for forming completely metallized via holes in semiconductor wafers. Metal pads are formed on one face of a semiconductor wafer together with a conductive interconnecting network. An insulating layer is then deposited to cover this face of the wafer. Holes are etched in the opposite face of the wafer up to and exposing a portion of the metal pads. The via holes are then completely filled with metal by means of electroplating, using the metal pads as a cathode.

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