Method of forming complementary device structures in partially p

Details Method of forming complementary device structures in partially p Method of forming complementary device structures in partially p

1987-10-09

1989-09-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 90, 437 62, 437 67, 148DIG50, H01L 21308, H01L 2120

Patent

active

048700290

ABSTRACT:
A method has been developed for altering the resistivity of selected regions (tubs) in a dielectrically isolated (DI) wafer. Subsequent to the formation of the conventional tub structure, the wafer is patterned and etched to expose selected tubs. These tubs are then etched and selectively implanted and an epitaxial layer of a new resistivity value is grown in the empty tube regions. The resistivity of the epitaxial material may be chosen to alter the conductivity of the selected tub regions.

REFERENCES:
patent: 3865649 (1975-02-01), Beasom
patent: 4017341 (1977-04-01), Suzuki et al.
patent: 4141765 (1979-02-01), Druminski et al.
patent: 4333227 (1982-06-01), Horng et al.
patent: 4378630 (1983-04-01), Horng et al.
patent: 4416050 (1983-11-01), Sarace
patent: 4553318 (1985-11-01), Chandrasekhar
patent: 4554059 (1985-11-01), Short et al.
patent: 4577395 (1986-03-01), Saibata
patent: 4579625 (1986-04-01), Tabata et al.
patent: 4582565 (1986-04-01), Kawakatsu
patent: 4593458 (1986-06-01), Adler
patent: 4624047 (1986-11-01), Tani
patent: 4713678 (1987-12-01), Womack et al.
patent: 4733287 (1988-03-01), Bower
Ghandhi, VLSI Fabrication Principle, John Wiley & Son, 1983, pp. 243-243.
Chi et al., "Conversion of the Conductivity Mode in Silicon by Oxygen Ion plantation and Its Application in a Novel Dielectric Isolation Technique", Appl. Phys. Lett. 40(5), Mar. 1, 1982, pp. 420-422.

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