Method of forming CMOS integrated circuitry

Details Method of forming CMOS integrated circuitry Method of forming CMOS integrated circuitry

1995-05-12

1996-11-05

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 40, 437 41, 437162, 437 56, 437 58, 148DIG82, H01L 21265

Patent

active

055717330

ABSTRACT:
A method of forming CMOS integrated circuitry includes, a) providing a series of field oxide regions and a series of gate lines over a semiconductor substrate, a first gate line being positioned for formation of an NMOS transistor, a second gate line being positioned for formation of a PMOS transistor; b) providing a layer of polysilicon to define a first and second pairs of polysilicon outward projections extending from the semiconductor substrate adjacent the first and second gate lines, respectively; c) masking one of the first or second pair of polysilicon projections while conductively doping the other of the first or second pair with an n-type or a p-type conductivity enhancing dopant impurity, respectively; d) masking the other of the first or second pair of polysilicon projections while conductively doping the one of the first or second pair of polysilicon projections with an n-type or a p-type conductivity enhancing dopant impurity, respectively; e) out-diffusing conductivity enhancing dopant impurity from the respective pairs of polysilicon projections into the semiconductor substrate to provide respective NMOS and PMOS type diffusion regions within the substrate adjacent the respective first and second gate lines. A combination of blanket doping and masked doping to produce the respective NMOS and PMOS type diffusion regions is also contemplated. The invention also has utility to formation of only one of NMOS or PMOS type field effect transistors, as opposed to CMOS formation.

REFERENCES:
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patent: 4945070 (1990-07-01), Hsu
patent: 5112761 (1992-05-01), Matthews
patent: 5200352 (1993-04-01), Pfiester
patent: 5422289 (1995-06-01), Pierce
Michael, A. E. et al., "Ion-Implanted Polysilicon Diffusion Sources", Nuclear instruments and Methods, North-Holland Publishing Company, 1983, pp. 700-724.
Kusters, K. H. et al., "A Self Aligned Contact Process with Improved Surface Planarization", Journal De Physique, No. C4, Sep. 1988, pp. 503-506.

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