Method of forming closely spaced lines or contacts in semiconduc

Details Method of forming closely spaced lines or contacts in semiconduc Method of forming closely spaced lines or contacts in semiconduc

1981-07-20

1983-09-06

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Electrical device making

29571, 29578, 357 59, 156628, H01L 21223, B01J 1700

Patent

active

044021283

ABSTRACT:
A method for forming closely spaced conductors suitable for use, for example, in CCD's and MESFET's is described utilizing an edge diffusion technique to convert exposed edge portions of a polycrystalline silicon layer to a non-etchable form. The converted portions are precisely and accurately formed to serve as spacers, thereby defining a narrow gap between adjacent conductive lines.

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