Method of forming capacitors in a semiconductor device

Details Method of forming capacitors in a semiconductor device Method of forming capacitors in a semiconductor device

1999-05-19

2000-07-04

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438250, 438393, H01L 2120

Patent

active

060838051

ABSTRACT:
A method of forming capacitors in a semiconductor device, involves providing a first insulating layer, providing a first mask with an array of apertures over the insulating layer, and etching an array of holes in the first insulating layer through said apertures in said first mask. A first electrode layer extending into the holes is formed over the first insulating layer. A second dielectric layer extends into the holes on said first electrode layer. A second electrode layer extends into the holes on the dielectric layer. The capacitors are patterned with a second mask. The capacitors can be subsequently connected into the circuit in a sequence of processing steps that only involve the addition two extra masks beyond those conventionally employed in integrated circuit manufacture.

REFERENCES:
patent: 5576240 (1996-11-01), Radosevich et al.
patent: 5858832 (1999-01-01), Pan
patent: 5985731 (1999-11-01), Weng et al.

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