Method of forming capacitors containing tantalum

Details Method of forming capacitors containing tantalum Method of forming capacitors containing tantalum

1998-06-15

2000-11-14

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

438396, H01L 2120

Patent

active

061469599

ABSTRACT:
The invention pertains to methods of forming capacitors and semiconductor circuit components. In one aspect, the invention includes a method of forming a dielectric layer comprising: a) forming a first tantalum-comprising layer; and b) forming a second tantalum-comprising layer over the first tantalum-comprising layer, the second tantalum-comprising layer comprising nitrogen. In another aspect, the invention includes a method of forming a capacitor comprising: a) forming a first capacitor plate; b) forming a first layer over the first capacitor plate, the first layer comprising tantalum and oxygen; c) annealing the first layer in the presence of an ambient comprising a nitrogen-comprising gas containing at least one compound selected from a group consisting of ammonia, hydrazine and hydrazoic acid; the annealing forming a second layer over the first layer; and d) forming a second capacitor plate over the second layer.

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