Method of forming capacitors and interconnect lines

Details Method of forming capacitors and interconnect lines Method of forming capacitors and interconnect lines

1996-04-12

1998-04-21

Niebling, John

Fishing, trapping, and vermin destroying

437 52, H01L 2170

Patent

active

057417210

ABSTRACT:
A multi-region material structure and process for forming capacitors and interconnect lines for use with integrated circuits provides (1) capacitor first or bottom electrodes comprising a transition-metal nitride; (2) a capacitor dielectric comprising a transition-metal oxide; (3) capacitor second or top electrodes comprising a transition-metal nitride, a metal or multiple conductive layers; (4) one or more levels of interconnect lines; (5) electrical insulation between adjacent regions as required by the application; and (6) bonding between two regions when such bonding is required to achieve strong region-to-region adhesion or to achieve a region-to-region interface that has a low density of electrical defects. The process for forming the material structures involves formation of the capacitor dielectric on the first electrode surfaces by conversion of a conductive transition-metal nitride to an insulating transition-metal oxide and formation of low-defect-density interfaces between capacitor second electrodes and the capacitor dielectric.

REFERENCES:
patent: 4970564 (1990-11-01), Kimura et al.
patent: 5231044 (1993-07-01), Jun
patent: 5248629 (1993-09-01), Muroyama

Affiliated with

Also associated with

Rating

Method of forming capacitors and interconnect lines does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming capacitors and interconnect lines, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming capacitors and interconnect lines will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2057180