Method of forming capacitor while protecting dielectric from etc

Details Method of forming capacitor while protecting dielectric from etc Method of forming capacitor while protecting dielectric from etc

1997-01-22

1999-11-16

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, 438253, H01L 218242

Patent

active

059856769

ABSTRACT:
Disclosed is a capacitor incorporating a material having a high dielectric constant and a method of fabricating the same. In a preferred embodiment, the bottom electrode is first deposited and patterned. A thick, planarized insulating layer is deposited over the bottom electrode and a contact via is opened in the insulating layer to exposed the bottom electrode. This via is filled with the dielectric material. A top conductive layer is deposited over the dielectric material, masked and etched to form the top conductive layer. This etch may simultaneously etch any portion of the dielectric layer overflowing the contact via.

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