Method of forming buried oxygen layer using MeV ion implantation

Details Method of forming buried oxygen layer using MeV ion implantation Method of forming buried oxygen layer using MeV ion implantation

1996-12-24

1999-04-06

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 27, 437 11, 437 26, 437 21, 437939, H01L 21265

Patent

active

058917438

ABSTRACT:
A method of manufacturing a wafer having a buried oxide layer at a desired depth is disclosed. The method includes the steps of implanting a standard species ion at an energy at or above 1 MeV into an oxygen-rich wafer to form a defect region at the desired depth in the oxygen rich wafer. The wafer is annealed such that oxygen in the wafer is gettered to the defect region to form the buried oxide layer.

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G. Galvagno et al., AI-O Interactions in Ion-Implanted Crystalline Silicon, Journal of Applied Physics, vol. 76, No. 4, 15 Aug. 1994, pp. 2070-2077.

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