Method of forming buried collector for bipolar transistor in a s

Details Method of forming buried collector for bipolar transistor in a s Method of forming buried collector for bipolar transistor in a s

1980-11-13

1983-06-21

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21265, H01L 21225

Patent

active

043892558

ABSTRACT:
In the process of manufacturing integrated circuits, the steps of forming a layer of polysilicon, in which a dopant will be implanted, over an oxide mask having suitable windows to define zones of one conductivity type to be formed in a substrate of another conductivity type, driving the dopant from the polysilicon layer into the substrate to form the zones in the substrate, oxidizing the polysilicon layer so that the oxidized polysilicon layer and the mask become an integral layer, and then removing the integrated oxide layer. Thereafter, other layers may be formed on the substrate.

REFERENCES:
patent: 3928095 (1975-12-01), Harigaya et al.
patent: 4063967 (1977-12-01), Graul et al.
patent: 4151010 (1979-04-01), Goth

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