Method of forming buffer layer for nitride compound...

Details Method of forming buffer layer for nitride compound... Method of forming buffer layer for nitride compound...

2011-01-25

2011-01-25

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S037000, C438S046000, C438S047000, C438S602000, C438S604000

Reexamination Certificate

active

07875470

ABSTRACT:
A method of forming a buffer layer for a nitride compound semiconductor light emitting device includes placing a sapphire (Al2O3) substrate in a reaction chamber; introducing a nitrogen source gas into a reaction chamber; and annealing the substrate in a state where the nitrogen source gas is introduced into the reaction chamber, to form an AIN compound layer on the substrate. The AIN compound layer having intermediate properties between those of the substrate and a semiconductor layer is formed between the substrate and the semiconductor layer. Thus, an interface space between the AIN compound layer and the buffer layer or the semiconductor layer that is to be formed on the AIN compound layer becomes smaller and a crystal stress also becomes smaller, thereby reducing a crack that may be generated due to differences in lattice constant and thermal expansion coefficient between the substrate and the semiconductor layer.

REFERENCES:
patent: 6744076 (2004-06-01), Fukuyama et al.
patent: 6869806 (2005-03-01), Cui et al.
patent: 7012016 (2006-03-01), Gwo
patent: 1041609 (2000-10-01), None
patent: 2001-237457 (2001-08-01), None
patent: 2002-043617 (2002-02-01), None
patent: 10-2005-0014344 (2005-02-01), None

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