Coating processes – Coating by vapor – gas – or smoke
Patent
1997-03-31
1999-05-11
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
4272552, 4272551, C23C16/00
Patent
active
059026391
ABSTRACT:
A method of forming a bismuth-containing material layer on a substrate, comprising bubbler delivery or liquid delivery vaporization of a bismuth amide source reagent to form a bismuth-containing source vapor, and deposition on the substrate of bismuth from the bismuth-containing source vapor, to form the bismuth-containing material layer on the substrate. The bismuth amide source reagent may include a bismuth amide compound of the formula BiL.sup.1.sub.x L.sup.2.sub.y (NR.sup.1 R.sub.2).sub.z wherein: z is an integer of from 1 to 3; x+y+z=3; each of L.sup.1 and L.sup.2 is independently selected from C.sub.1 -C.sub.4 alkyl, C.sub.1 14 C.sub.4 alkoxide, .beta.-diketonate, cyclic amido, cyclic tris-alkoxoamine, and C.sub.6 -C.sub.10 aryl; and each of R.sup.1 and R.sup.2 is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 alkoxy, C.sub.6 -C.sub.8 cycloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.4 carboxyl, and --SiR.sup.3.sub.3 wherein each R.sup.3 is independently selected from H and C.sub.1 -C.sub.4 alkyl. Bismuth-containing films of the invention may be utilized in the construction of spatial light modulator devices, as buffer layers for the fabrication of ferroelectric material devices, and in dielectric, ferroelectric and superconductor thin film applications.
REFERENCES:
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patent: 5536323 (1996-07-01), Kirlin et al.
Communication, Synthesis and X-Ray Crystal Structure of a Homoleptic Bismuth Amide, William Clegg, et al., Polyhedron vol. 8, No. 12 pp. 1579-1580, 1989. Inorg. Chem., 1991, 30, pp. 4680-4682.
Baum Thomas H.
Bhandari Gautam
Glassman Timothy E.
Advanced Technology Materials, Inc
Hultquist Steven J.
King Roy V.
Zitzmann Oliver A. M.
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