Method of forming bipolar transistors with graft base regions

Details Method of forming bipolar transistors with graft base regions Method of forming bipolar transistors with graft base regions

1985-06-05

1987-02-03

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 29576B, 29578, 29591, H01L 21385

Patent

active

046407219

ABSTRACT:
After an end part of a polycrystalline silicon film has been oxidized from an exposed side surface thereof, a silicon dioxide film formed is removed, and an opening thus provided is used for diffusing an impurity into a semiconductor substrate so as to form a graft base region.
This measure is effective for fabricating a semiconductor device of small required area at high precision.

REFERENCES:
patent: 4431460 (1984-02-01), Barson et al.
patent: 4481706 (1984-11-01), Roche
patent: 4492008 (1985-01-01), Anantha et al.
patent: 4507171 (1985-03-01), Bhatia et al.
patent: 4512075 (1985-04-01), Vora
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4545114 (1985-10-01), Ho et al.
patent: 4546536 (1985-10-01), Anantha et al.

Affiliated with

Also associated with

Rating

Method of forming bipolar transistors with graft base regions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming bipolar transistors with graft base regions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming bipolar transistors with graft base regions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1090225