Method of forming bifets by forming isolation regions connected

Details Method of forming bifets by forming isolation regions connected Method of forming bifets by forming isolation regions connected

1983-09-13

1985-07-16

Roy, Upendra

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576B, 29577C, 148 15, 148187, 357 34, 357 91, H01L 21265, H01L 2120

Patent

active

045294569

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor integrated circuit device, especially a Bi-MOS IC. It comprises:

REFERENCES:
patent: 4168997 (1979-09-01), Compton
patent: 4295898 (1981-10-01), Yoshida et al.
patent: 4346512 (1982-08-01), Liang et al.
patent: 4362574 (1982-12-01), Gevondyan
patent: 4403395 (1983-09-01), Curran
patent: 4443933 (1984-04-01), DeBrebisson
Muggli IBM-TDB, 24 (1981), 997.
Chang et al., IBM-TDB, 24 (1982), 5571.

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