Method of forming barrier layer

Details Method of forming barrier layer Method of forming barrier layer

2006-10-03

2006-10-03

Norton, Nadine (Department: 1765)

Compositions

Etching or brightening compositions

C257SE21528, C438S098000, C438S629000, C438S639000, C438S648000, C438S690000

Reexamination Certificate

active

07115214

ABSTRACT:
First, a substrate having at least a conducting layer is provided. Then, a CVD process is performed to form the Ti/TiN barrier layer onto the conducting layer. An examination procedure is followed, and if particles are detected in the Ti/TiN barrier layer, then a rework procedure is performed to remove the Ti/TiN barrier layer and to reform a new Ti/TiN barrier layer.

REFERENCES:
patent: 5338975 (1994-08-01), Cole et al.
patent: 5885900 (1999-03-01), Schwartz
patent: 6140224 (2000-10-01), Lin
patent: 6297065 (2001-10-01), Huang et al.
patent: 6368410 (2002-04-01), Gorczyca et al.
patent: 6396147 (2002-05-01), Adachi et al.
patent: 6613614 (2003-09-01), Yamazaki et al.
Kern; Handbook of Semiconductor Wafer Cleaning Technology—Science, Technology, and Applications; 1993; William Andrew Publishing/Noyes.
Handbook of Semiconductor Wafer Cleaning Technology—Science, Technology, and Applications; Edited by kern, W.; Published 1993 by William Andrew Publishing/Noyes.

Affiliated with

Also associated with

Rating

Method of forming barrier layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming barrier layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming barrier layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3676434