Method of forming at least two metallizations of a semiconductor

Details Method of forming at least two metallizations of a semiconductor Method of forming at least two metallizations of a semiconductor

1986-06-09

1988-02-16

Morgenstern, Norman

Fishing, trapping, and vermin destroying

437245, 427259, B05D 512

Patent

active

047255668

ABSTRACT:
A method is provided for forming metallizations on a semiconductor component, which are closer together than is possible with the present day masking technology.
In accordance with the invention, a pattern of minimum dimensions is defined in a mask by means of two openings. This pattern is underetched, either by light over-exposure, or by particle back-scattering. Two metallizations are deposited, directionally in the bottom of the openings then a dielectric layer is deposited, non directionally, on the metallizations, the mask is removed by dissolution.

REFERENCES:
patent: 4108717 (1978-08-01), Widmann
patent: 4109029 (1978-08-01), Ozdemir
patent: 4353935 (1982-10-01), Symersky
patent: 4617193 (1986-10-01), Wu

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