Method of forming at least one thin film device

Details Method of forming at least one thin film device Method of forming at least one thin film device

2007-04-10

2007-04-10

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S618000, C257S208000

Reexamination Certificate

active

11025750

ABSTRACT:
This invention provides a method of forming at least one thin film device, such as for example a thin film transistor. The method includes providing a substrate and depositing a plurality of thin film device layers upon the substrate. An imprinted 3D template structure is provided upon the plurality of thin film device layers. The plurality of thin film layers and 3D template structure are etched and at least one thin film layer is undercut.

REFERENCES:
patent: 5346850 (1994-09-01), Kaschmitter et al.
patent: 6613243 (2003-09-01), Ricks
patent: 6808646 (2004-10-01), Jeans
patent: 2003/0140317 (2003-07-01), Brewer et al.
patent: 2004/0002216 (2004-01-01), Taussig et al.
patent: 2004/0217085 (2004-11-01), Jeans

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