Method of forming and testing a phase shift mask

Details Method of forming and testing a phase shift mask Method of forming and testing a phase shift mask

2007-06-19

2007-06-19

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

10708869

ABSTRACT:
A surface of a mask substrate is divided into a main field region and a blank periphery region surrounding the main field region. A first pattern, at least one second pattern and at least one third pattern are formed within the main field region to form a phase shift mask (PSM). By using the PSM, a pattern transferring process is performed to transfer the first pattern, the second pattern and the third pattern to a semiconductor wafer. Finally, by using the second and third patterns transferred to the semiconductor wafer, a PSM test is performed.

REFERENCES:
patent: 5578421 (1996-11-01), Hasegawa et al.
patent: 6001512 (1999-12-01), Tzu et al.
patent: 6528836 (2003-03-01), Lee

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