Method of forming and etching titanium-tungsten interconnects

Details Method of forming and etching titanium-tungsten interconnects Method of forming and etching titanium-tungsten interconnects

1991-10-03

1992-11-17

Maples, John S.

Fishing, trapping, and vermin destroying

437200, 156664, H01L 2144, C23F 100

Patent

active

051643316

ABSTRACT:
A method of forming an interconnect, particularly a local interconnect, for a silicon substrate having integrated circuit devices between dielectric regions. Titanium disilicide is formed on electrode regions of the integrated circuit devices, whereafter titanium-tungsten is deposited across the silicon substrate. A photomask is formed and patterned to cover selected portions of the titanium-tungsten layer. The uncovered portions receive a preliminary etch of chlorine and carbon tetrafluoride to remove oxide. A second etch using trifluoromethane and oxygen removes the uncovered portions, leaving an electrically conductive interconnect extending from an electrode region onto a dielectric region leading to a second electrode region. The photomask is then removed.

REFERENCES:
patent: 4764245 (1988-08-01), Grewal
patent: 4889828 (1989-12-01), Jeuch
patent: 4927505 (1990-05-01), Sharma et al.
patent: 4957590 (1990-09-01), Douglas
patent: 5126007 (1992-06-01), Shmulovich

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