Method of forming an STI feature to avoid electrical charge...

Details Method of forming an STI feature to avoid electrical charge... Method of forming an STI feature to avoid electrical charge...

2005-12-06

2005-12-06

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S700000

Reexamination Certificate

active

06972241

ABSTRACT:
A method for forming shallow trench isolation (STI) structure including providing a substrate comprising an overlying hardmask layer; patterning the hardmask layer to form a hardmask layer opening for etching a trench through a substrate thickness portion; etching a trench according to the patterned overlying hardmask layer; carrying out a wet chemical oxidizing process to form an oxidized surface portion on the hardmask layer; carrying out a wet chemical etching process to remove at least a portion of the oxidized surface portion to form the hardmask opening having an enlarged width and the trench opening comprising rounded upper corners; and, forming a completed planarized STI structure filled with oxide.

REFERENCES:
patent: 5801083 (1998-09-01), Yu et al.
patent: 5843846 (1998-12-01), Nguyen et al.
patent: 5891787 (1999-04-01), Gardner et al.
patent: 6180466 (2001-01-01), Ibok
patent: 6261921 (2001-07-01), Yen et al.

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