Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-03-04
1992-08-25
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505734, 427 62, 427226, 4271263, B05D 302, B05D 512
Patent
active
051419181
ABSTRACT:
A method of forming an oxide superconductor thin film comprising the steps of:
REFERENCES:
patent: 4959347 (1990-09-01), Kobayashi et al.
Berkley et al., "In Situ Formation of Superconducting YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films Using Pure Ozone Vapor Oxidation", Appl. Phys. Lett. 53(20) Nov., 1988, pp. 1973-1975.
Mantese et al., "Rapid Thermal Annealing of High Tc Superconducting Thin Films Formed by Metalorganic Deposition", Appl. Phys. Lett. 52(19), May 1988, pp. 1631-1633.
Robinson et al., "Effect of Oxidizing Atmosphere on Superconductivity in RBa.sub.2 Cu.sub.3-x MxOz", MRS vol. 99, Nov. 1987, pp. 587-590.
Beck Shrive
King Roy V.
NGK Spark Plug Co. Ltd.
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