Method of forming an N-type doped single crystal diamond

Details Method of forming an N-type doped single crystal diamond Method of forming an N-type doped single crystal diamond

2004-10-29

2008-12-02

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S086000, C117S089000, C117S094000, C117S929000, C423S446000

Reexamination Certificate

active

07459024

ABSTRACT:
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

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