Method of forming an isolation region in a semiconductor device

Details Method of forming an isolation region in a semiconductor device Method of forming an isolation region in a semiconductor device

1988-03-04

1992-09-22

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437980, H01L 2176

Patent

active

051496690

ABSTRACT:
An isolation method which enables bird's beaks to be reduced and which also permits a reduction in the number of defects is disclosed. A masking layer which masks against field oxidation comprises a polycrystalline silicon film covered with silicon nitride films. The surface of the semiconductor substrate which is not masked by the masking layer is subjected to an oxidation treatment to form an element isolation region.

REFERENCES:
patent: 4080718 (1978-03-01), Richman
patent: 4272308 (1981-06-01), Varshney
patent: 4292156 (1981-09-01), Matsumoto et al.
patent: 4508757 (1985-04-01), Fabricius et al.
patent: 4533429 (1985-08-01), Josquin

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