Method of forming an isolation region comprising a trench isolat

Details Method of forming an isolation region comprising a trench isolat Method of forming an isolation region comprising a trench isolat

1994-11-08

1995-12-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437968, 437 63, 148DIG50, H01L 2176

Patent

active

054749530

ABSTRACT:
The present invention provides a novel method of forming an isolation region comprising a trench isolation region and a selective oxidation film region involved in a semiconductor integrated circuit device. A silicon oxide film is deposited on a surface of a trench groove formed within a semiconductor bulk, followed by a deposition of a polycrystalline silicon material. The silicon oxide film within the trench groove is subjected to etching up to a predetermined depth so as to form a hollow portion. A polycrystalline silicon film is deposited within the hollow portion and on both surfaces of the polycrystalline silicon material and the semiconductor bulk. The polycrystalline silicon film within the hollow portion, the polycrystalline silicon material and the semiconductor bulk in the vicinity of the trench groove is subjected to selective oxidation so as to form a selective oxidation film region. It is also permissive that a silicon nitride film is deposited on the silicon oxide film covering the surface of the trench groove prior to the deposition of the polycrystalline silicon material.

REFERENCES:
patent: 4853344 (1989-08-01), Darmawan
patent: 4876214 (1989-10-01), Yamaguchi et al.
patent: 4994406 (1991-02-01), Vasquez et al.
patent: 5061653 (1991-10-01), Teng
patent: 5112772 (1992-05-01), Wilson et al.
Y.-C. Simon Yu et al., "Planarized Deep-Trench Process for Self-Aligned Double Polysilicon Bipolar Device Isolation," Journal of the Electrochemical Society, 1046, 137, No. 6, Jun. 1990, Manchester, N.H., US, pp. 1942-1950.
"Formation of Thermal Isolation Cap Oxide," IBM Technical Disclosure Bulletin, vol. 33, No. 4, Sep. 1990, pp. 463-465.

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