Method of forming an isolation film in a semiconductor device

Details Method of forming an isolation film in a semiconductor device Method of forming an isolation film in a semiconductor device

2005-11-29

2005-11-29

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S429000, C438S433000

Reexamination Certificate

active

06969665

ABSTRACT:
Disclosed is a method of forming an isolation film in a semiconductor device. The method comprises the steps of providing a semiconductor substrate having a region where a P well will be formed and a region where a N well will be formed, forming an oxide film and a nitride film on the semiconductor substrate, removing portions of the nitride film and the oxide film and the semiconductor substrate below them to form first and second trenches in the region where the P well will be formed and the region where the N well will be formed, respectively, implementing an epitaxial growth process including a doping process to form a N type epitaxial growth layer in the first trench and a P type epitaxial growth layer in the second trench, and burying the first and second trenches with insulating films to form an isolation film.

REFERENCES:
patent: 4926233 (1990-05-01), Hutter
patent: 6399992 (2002-06-01), Matsumoto et al.
patent: 6436791 (2002-08-01), Lin et al.
patent: 6528379 (2003-03-01), Takada et al.
patent: 6682967 (2004-01-01), Matsumoto et al.
patent: 02203549 (1990-08-01), None
patent: 990028402 (1999-07-01), None
S. J. Ahn, et al.; “Novel DRAM Cell Transistor with Asymmetric Source and Drain Junction Profiles Improving Data Retention Characteristics”; 2002 Symposium On VLSI Technology Digest of Technical Papers; pp. 176-177.

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