Method of forming an isolated semiconductor structure

Details Method of forming an isolated semiconductor structure Method of forming an isolated semiconductor structure

1985-04-01

1986-12-09

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576W, 29580, 148186, 204 345, H01L 2138, H01L 21465

Patent

active

046278834

ABSTRACT:
Method of producing a silicon structure for fabricating integrated circuit devices therein by forming a plurality of regions of N-type single crystal silicon of high resistivity inset in the surface of silicon of either P-type conductivity or of N-type conductivity of low resistivity. The silicon contiguous with the regions of high resistivity N-type silicon is converted to porous silicon by anodically treating in an aqueous solution of HF. Then, conductivity type imparting material is diffused through the porous silicon into portions of the regions of N-type conductivity to alter their electrical characteristics to P-type or to low resistivity N-type. The porous silicon is then oxidized to silicon oxide, electrically isolating each of the N-type regions and its associated portion.

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patent: 4437226 (1984-03-01), Soclof
patent: 4510016 (1985-04-01), Chi et al.
patent: 4532700 (1985-08-01), Kinney et al.
patent: 4569701 (1986-02-01), Oh

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