Method of forming an interconnection structure

Details Method of forming an interconnection structure Method of forming an interconnection structure

1994-06-03

1996-01-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437194, 437195, H01L 2144, H01L 2148

Patent

active

054808367

ABSTRACT:
A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through connection holes. A first aluminum interconnection layer is formed on a main surface of the semiconductor substrate. The first aluminum interconnection layer has a surface layer which includes any of high melting point metal, high melting point metal compound, high melting point metal silicide, or amorphous silicon. An insulating layer is formed on the first aluminum interconnection layer, and has a through hole if formed extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the surface layer of the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer. The titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum interconnection layer through the through hole. The titanium nitride layer is formed on the titanium layer. The aluminum alloy layer is formed on the titanium nitride layer. An electrical contact resistance between the first and second aluminum interconnection layers is stabilized, and resistance against the electron-migration and stress-migration is improved in the interconnection structure.

REFERENCES:
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patent: 5278099 (1994-01-01), Maeda
Abe et al., "High Performance Multilevel Interconnection System With Stacked Interlayer Dielectrics By Plasma CVD And Bias Sputtering", Jun. 12-13, 1989 VMIC Conference, 1989 IEEE, pp. 404-410.
Hideki Tomioka et al., "A New Reliability Problem Associated With An Ion Sputter Cleaning Of Interconnect Vias", 1989 IEEE/IRPS, pp. 53-58.
T. Fujii et al., "Comparison Of Electromigration Phenomenon Between Aluminum Interconnetion Of Various Multilayered Materials", Jun. 12-13, 1989 VMIC Conference, 1989 IEEE, pp. 477-483.
Norman G. Einspruch et al., "VLSI Electronics Microstructure Science", vol. 15, 1987, pp. 304-305.

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