Method of forming an interconnection

Details Method of forming an interconnection Method of forming an interconnection

1979-01-03

1980-06-17

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

204192E, C25F 302, C25F 314, C23C 1500

Patent

active

042082579

ABSTRACT:
A lift-off layer made of a non-photosensitive resin or the like deposited on a substrate is put into a pattern inverse to an interconnection pattern by etching employing a molybdenum mask, a metal layer for interconnection metalization is formed on the whole area of the lift-off layer, and the molybdenum mask is removed by electrolytic etching, to simultaneously strip off and remove the metal layer overlying the mask, whereby an interconnection is formed. Thus, the interconnection can be formed in a much shorter time than in a prior-art lift-off technique.

REFERENCES:
patent: 3560357 (1971-02-01), Shaw
patent: 3984300 (1976-10-01), Van Ommeren
patent: 4004044 (1977-01-01), Franco

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