Method of forming an integrated semiconductor device and...

Semiconductor device manufacturing: process – Avalanche diode manufacture

Reexamination Certificate

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Details

C257S603000, C257SE21608, C327S552000

Reexamination Certificate

active

07955941

ABSTRACT:
In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.

REFERENCES:
patent: 5880511 (1999-03-01), Yu et al.
patent: 5990511 (1999-11-01), Leas
patent: 6115592 (2000-09-01), Ueda et al.
patent: 6121669 (2000-09-01), Kalb et al.
patent: 6140674 (2000-10-01), Hause et al.
patent: 6489660 (2002-12-01), Einthoven et al.
patent: 6822295 (2004-11-01), Larson
patent: 6953980 (2005-10-01), Escoffier et al.
patent: 6984860 (2006-01-01), Grivna et al.
patent: 7262681 (2007-08-01), Hurley
patent: 2003/0205775 (2003-11-01), Einthoven et al.
patent: 2006/0181385 (2006-08-01), Hurley
patent: 2007/0073807 (2007-03-01), Bobde
patent: 2009/0079001 (2009-03-01), Salih et al.
NUF9300 Data Sheet, Product Preview, “5-Line EMI Filter with ESD Protection”, Copyright Semiconductor Components Industries, LLC, 2005, Apr. 2005—Rev. P1, Publication Order No. NUF9300/D, 6pps.
Data Sheet, Semtech, “uClamp3301D Low Voltage uClamp(tm) for ESD and CDE Protection, Protection Products—MicroClamp(tm)”, Revision Oct. 25, 2004, Copyright 2004 Semtech Corp., 6pps.
Data Sheet, Semtech, RCIamp0502B Ultra-Low Capacitance TVS for ESD and CDE Protection, Protection Products—RailClamp(r) Revision Apr. 5, 2005, Copyright 2005 Semtech Corp., 9pps.
Data Sheet, Semtech, “RCIamp0514M RailClamp(r) Low Capacitance TVS Diode Array, Protection Products—RailClamp(r)”, Revision Aug. 31, 2005, Copyright 2005 Semtech Corp., 11pps.
Data Sheet, Semtech, “RCIamp05022P RCIamp0524P Ultra Low Capacitance TVS Arrays, Protection Products—RailClamp(r)”, Revision Sep. 19, 2006, Copyright 2006 Semtech Corp., 13pps.

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