Method of forming an integrated resistor

Semiconductor device manufacturing: process – Making passive device – Resistor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21004, C438S381000

Reexamination Certificate

active

07541253

ABSTRACT:
In a semiconductor device, a thin film resistor is formed by making use of an interconnect structure and etching back the layers over the glue layer of the interconnect structure and using the glue layer as a thin film resistor.

REFERENCES:
patent: 5945257 (1999-08-01), Doeling
patent: 6110826 (2000-08-01), Lou et al.
patent: 6171899 (2001-01-01), Liou et al.
patent: 6940147 (2005-09-01), Crawford et al.
patent: 7186639 (2007-03-01), Lee
patent: 2002/0016078 (2002-02-01), Ionov et al.
patent: 2005/0104107 (2005-05-01), Fazan et al.
patent: 2005/0186796 (2005-08-01), Lin et al.
patent: 2005/0263769 (2005-12-01), Chul Ahn
patent: 2007/0045693 (2007-03-01), Manning et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming an integrated resistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an integrated resistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an integrated resistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4113749

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.