Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1997-10-14
2000-04-25
Bowers, Charles
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438238, 336200, H01L 2100
Patent
active
060543299
ABSTRACT:
High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.
REFERENCES:
patent: 4418470 (1983-12-01), Naster et al.
patent: 4494100 (1985-01-01), Stengel et al.
patent: 4648087 (1987-03-01), Scranton et al.
patent: 5070317 (1991-12-01), Bhagat
patent: 5095357 (1992-03-01), Andoh et al.
patent: 5227659 (1993-07-01), Hubbard
patent: 5279988 (1994-01-01), Saadat et al.
patent: 5372967 (1994-12-01), Sundaram et al.
patent: 5425167 (1995-06-01), Shiga et al.
patent: 5446311 (1995-08-01), Ewen et al.
patent: 5497337 (1996-03-01), Ponnapalli et al.
patent: 5572179 (1996-11-01), Ito et al.
patent: 5834825 (1998-11-01), Imai
Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, p. 161, Jan. 1986.
Silicon Processing for the VLSI Era, vol. 2: Process Integration, Lattice Press, p. 238, Jan. 1990.
S.A. Oliver et al. (1989) "Magnetic and Microwave Resonance Characterization of Ion Beam Sputtered Amorphous FexNi80-xB15Si5 Films" IEEE Transactions on Magnetics 25(5): 3355-3357.
K. Shirakawa et al. (1990) "Thin Film Cloth-structured Inductor for Magnetic Integrated Circuit" IEEE Transactions on Magnetics 26(5): 2262-2264.
V. Surganov (1994) "Planarized Thin Film Inductors and Capacitors for Hybrid Integrated Circuits . . . " IEEE Trans. on Components, Pack'g. and Manuf'g. Tech.-Part B: Advanced Packaging 17(2): 197-200.
C.H. Ahn et al. (1994) "A Fully Integrated Planar Toroidal Inductor With a Micromachined . . . " IEEE Trans. on Components, Pack'g. and Manuf'g. Tech -Part A 17(2): 463-469.
M. Soyuer et al. (1995) "Multilevel monolithic inductors in silicon technology" Electronics Letters 31(5): 359-360.
Burghartz Joachim Norbert
Edelstein Daniel Charles
Jahnes Christopher Vincent
Uzoh Cyprian Emeka
Bowers Charles
Brewster William M.
International Business Machines - Corporation
Trepp, Esq. Robert M.
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