Method of forming an integrated circuit incorporating higher...

Details Method of forming an integrated circuit incorporating higher... Method of forming an integrated circuit incorporating higher...

2007-06-19

2007-06-19

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including passive device

C438S197000, C438S217000, C438S381000, C257SE21158, C257SE21632, C257SE21696

Reexamination Certificate

active

10924469

ABSTRACT:
A method of forming an integrated circuit configured to accommodate higher voltage and low voltage devices. In one embodiment, the method of forming the integrated circuit includes forming a transistor by forming a gate over a semiconductor substrate. The method of forming the transistor also includes forming a source/drain by forming a lightly doped region adjacent a channel region recessed into the semiconductor substrate and forming a heavily doped region adjacent the lightly doped region. The method of forming the transistor further includes forming an oppositely doped well under and within the channel region, and forming a doped region between the heavily doped region and the oppositely doped well. The doped region has a doping concentration profile less than a doping concentration profile of the heavily doped region. The method of forming the integrated circuit also includes forming a driver switch of a driver on the semiconductor substrate.

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