Method of forming an integrated circuit having a device...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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Details

C438S510000, C438S514000, C438S542000, C438S558000, C438S787000, C257SE21135, C257SE21211

Reexamination Certificate

active

07605052

ABSTRACT:
A method for forming a diffused, doped backside layer on a device wafer oxide bonded to a handle wafer in an integrated circuit is provided. The method comprises forming a thermal bond oxide layer on a backside surface of the device wafer of the integrated circuit. Implanting the bond oxide with a diffusing dopant. Diffusing dopant from the bond oxide into the backside surface of the device wafer. Depositing an oxide layer on the bond oxide and bonding the deposited oxide layer to the handle wafer of the integrated circuit.

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