Method of forming an insulating film

Details Method of forming an insulating film Method of forming an insulating film

1978-08-15

1979-12-11

Powell, William A.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156657, 156662, 357 24, 357 53, 427 87, H01L 21312, C03C 1500, C03C 2506

Patent

active

041783964

ABSTRACT:
A method of forming an insulating film of high breakdown voltage on a polycrystalline substance layer which comprises the steps of preparing the polycrystalline substance layer; selectively removing the polycrystalline substance layer; heat-treating for the first time that portion of the polycrystalline substance layer which is left after said selective removal in an oxidizing atmosphere to provide an oxide layer; removing the whole of said oxide layer; and heat-treating for the second time in an oxidizing atmosphere the polycrystalline substance layer which is now exposed due to removal of said oxide layer, thereby forming a second oxide layer acting as an insulating film on said exposed surface.

REFERENCES:
patent: 3911168 (1975-10-01), Schinella
patent: 4084986 (1978-04-01), Aoki et al.
Applied Physics Letters, vol. 27, No. 9, 11-1-75, Interface Effects and High Conductivity in Oxides Grown from Polycrystalline Silicon, by D. J. DiMaria, pp. 505-507.
Journal of Applied Physics, vol. 48, No. 11, Nov. 1977, Evidence for Surface Asperity Mechanism of Conductivity in Oxide Grown on Polycrystalline Silicon, by R. M. Anderson et al., pp. 4834-4836.

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