Method of forming an indium phosphide-boron phosphide heterojunc

Details Method of forming an indium phosphide-boron phosphide heterojunc Method of forming an indium phosphide-boron phosphide heterojunc

1985-04-15

1986-09-16

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29580, 148 15, 148175, 148DIG65, 148DIG72, 148DIG76, 148DIG84, 148DIG110, 148DIG119, 357 16, 357 61, H01L 2120, H01L 21265

Patent

active

046113886

ABSTRACT:
A heterojunction bipolar transistor having an n- type epitaxial indium phosphide collector layer grown on a semi-insulating indium phosphide substrate with an n+ buried layer, a p- type indium phosphide base and an epitaxial, n- type boron phosphide wide gap emitter. The p- type base region is formed by ion implantation of magnesium ions into the collector layer. The transistor is applicable to millimeter wave applications due to the high electron mobility in the indium phosphide base. The wide gaps of both the boron phosphide (2.2 eV) and indium phosphide (1.34 eV) permit operation up to 350.degree. C. The transistor is easily processed using metal organic-chemical vapor deposition (MO-CVD) and standard microelectronic techniques.

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Fank et al, "Device Development of MM-Waves", Microwave Journal, Jun. 1979, pp. 86-91.
Kroemer, H., "Heterostructure Bipolar Transistors . . . Circuits", Proc. IEEE, vol. 70, No. 1, Jan. 1982, pp. 13-25.

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