Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-11-06
2007-11-06
Ngô, Ngân V. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S426000, C438S427000, C438S700000
Reexamination Certificate
active
11406743
ABSTRACT:
The invention is directed to a hermetically packaged and implantable integrated circuit for electronics that is made my producing streets in silicon-on-insulator chips that are subsequently coated with a selected electrically insulating thin film prior to completing the dicing process to yield an individual chip. A thin-layered circuit may transmit light, allowing a photodetector to respond to transmitted light to stimulate a retina, for example. Discrete electronic components may be placed in the three-dimensional street area of the integrated circuit package, yielding a completely integrated hermetic package that is implantable in living tissue.
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DelMain Gregory J.
Greenberg Robert J.
Mech Brian V.
Dunbar Scott B.
Lendvai Tomas
Ngo Ngan V.
Second Sight Medical Products, Inc.
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