Method of forming an HSG capacitor layer via implantation

Details Method of forming an HSG capacitor layer via implantation Method of forming an HSG capacitor layer via implantation

1998-04-22

2000-07-18

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

257309, 438532, H01L 2120, H01L 27108

Patent

active

060906812

ABSTRACT:
In manufacturing a semiconductor device, an amorphous silicon layer with a predetermined thickness to be electrically connected to a silicon substrate is formed on a silicon oxide film formed on the silicon substrate. The interface between the silicon oxide film and the amorphous silicon layer is mixed by implanting ions through the amorphous silicon layer. Nuclei are formed on the surface of the amorphous silicon layer by annealing of the amorphous silicon layer and irradiation of a predetermined material. Convexities are formed on the surface of the amorphous silicon layer using the nuclei as centers by annealing the amorphous silicon layer having the nuclei.

REFERENCES:
patent: 4904611 (1990-02-01), Chiang et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5858837 (1999-01-01), Sakoh et al.

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