Method of forming an etch stop layer in a semiconductor device

Details Method of forming an etch stop layer in a semiconductor device Method of forming an etch stop layer in a semiconductor device

2005-09-06

2005-09-06

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257S382000, C257S383000, C257S758000

Reexamination Certificate

active

06939812

ABSTRACT:
There is a method of manufacturing a semiconductor device. In an example embodiment, the method comprises applying a semiconductor substrate that is provided with a conductor at a surface. The conductor has a top surface portion and sidewall portions, of which at least the top surface portion is provided with an etch stop layer comprising silicon carbide. A dielectric layer is applied. A via is etched in the dielectric layer over the conductor and, and stopping on the etch stop layer to create an exposed part of the etch stop layer. Inside the via from at least the top surface portion of the conductor, the exposed part of the etch stop layer is removed. The via is filled with a conductive material.

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