Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-02-11
1977-06-28
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148 72, 148 15, 118428, 252 623GA, H01L 21208
Patent
active
040323706
ABSTRACT:
The improved method of the present invention comprises contacting a clean and preferably etched selected crystalline substrate with a controlled thickness of a melt comprising a saturated solution of selected materials capable of forming semi-conductor junctions, preferably heterojunctions, with the substrate. The contacting is carried out while the resulting melt and substrate sandwich is shielded by a protective atmosphere of gas such as hydrogen and while the sandwich is subjected to a progressively lower temperature gradient maintained across the melt-wafer package.
The method and apparatus are particularly applicable to the preparation of improved light-emitting diodes by the liquid epitaxial growth technique.
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patent: 3520735 (1970-07-01), Kurata
patent: 3533856 (1970-10-01), Panish et al.
patent: 3669763 (1972-06-01), Perusek
patent: 3715245 (1973-02-01), Barnett et al.
patent: 3809010 (1974-05-01), Springthorpe
patent: 3956023 (1976-05-01), Cline et al.
patent: 3967987 (1976-07-01), Jones et al.
International Audio Visual, Inc.
Ozaki G.
Posta Jr. John J.
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