Method of forming an encapsulating electrode

Details Method of forming an encapsulating electrode Method of forming an encapsulating electrode

2005-08-26

2011-11-15

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S763000, C427S074000, C427S096400, C257SE51013

Reexamination Certificate

active

08058093

ABSTRACT:
An organic photosensitive optoelectronic device is formed in which the organic photoconductive materials are encapsulated by an electrode of the device. A first transparent film is provided that comprises a first electrically conductive material, arranged on a transparent substrate. A first photoconductive organic material is deposited over the first electrically conductive material. A metal is deposited at an initial rate of no more than 1 nm/s over the first photoconductive organic material, completely covering any exposed portions of the first photoconductive organic material and any exposed interfaces with the first photoconductive organic material to a thickness of no less than 10 nm. After the thickness of no less than 10 nm is obtained, the metal is sputtered at an increased rate at least three times the initial rate until a cumulative thickness of the metal completely covering the previously exposed portions of the first photoconductive organic material and the previously exposed interfaces with the first conductive organic material is at least 250 nm.

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