Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-07-04
2006-07-04
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S075000, C438S145000
Reexamination Certificate
active
07071020
ABSTRACT:
The invention provides an elevated photodiode for image sensors and methods of formation of the photodiode. Elevated photodiodes permit a decrease in size requirements for pixel sensor cells while reducing leakage, image lag and barrier problems typically associated with conventional photodiodes.
REFERENCES:
patent: 5625210 (1997-04-01), Lee et al.
patent: 5880495 (1999-03-01), Chen
patent: 5977561 (1999-11-01), Wu
patent: 6127697 (2000-10-01), Guidash
patent: 6140630 (2000-10-01), Rhodes
patent: 6204524 (2001-03-01), Rhodes
patent: 6218691 (2001-04-01), Chung et al.
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6333205 (2001-12-01), Rhodes
patent: 6376868 (2002-04-01), Rhodes
patent: 6570201 (2003-05-01), Shim
patent: 6570222 (2003-05-01), Nozaki et al.
patent: 6617623 (2003-09-01), Rhodes
patent: 6642087 (2003-11-01), Nozaki et al.
patent: 6677656 (2004-01-01), François
patent: 6686220 (2004-02-01), Rhodes et al.
patent: 6693335 (2004-02-01), Gonzalez et al.
patent: 6847051 (2005-01-01), Hong
Dickstein , Shapiro, Morin & Oshinsky, LLP
Malsawma Lex H.
Micro)n Technology, Inc.
Smith Matthew
LandOfFree
Method of forming an elevated photodiode in an image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming an elevated photodiode in an image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an elevated photodiode in an image sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3543699