Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-01-17
1999-11-02
Everhart, Caridad
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257741, 257770, 438675, 438680, 438655, H01L 2943, H01L 21443
Patent
active
059776366
ABSTRACT:
Gaseous material is provided within a reactor having a substrate positioned therein, with the gaseous material comprising at least titanium and boron. The gaseous material is provided at conditions effective to chemical vapor deposit titanium boride on the substrate. In one implementation, the gaseous material is derived from at least two gases, with a first of such gases comprising titanium and a second of such gases comprising boron. Such can be utilized to form a reaction or diffusion barrier layer over a substrate relative to a contact opening. The invention also comprises integrated circuitry. In one implementation, a contact opening is formed into an insulating dielectric material over a substrate. An electrically conductive plugging material predominately comprising titanium boride substantially fills the contact opening. In another implementation, an electrically conductive electrode comprises a layer of titanium boride in contact with a layer of a refractory metal silicide. In still another implementation, integrated circuitry includes a contact electrode in ohmic electrical connection with a semiconductor substrate, where the contact electrode comprises a metal over the semiconductor substrate and a layer of titanium boride interposed between the metal and the semiconductor substrate.
REFERENCES:
patent: 4239819 (1980-12-01), Holzl
patent: 4296309 (1981-10-01), Shinmi et al.
patent: 4374903 (1983-02-01), Intrater et al.
patent: 4472453 (1984-09-01), Hoffman
patent: 5057163 (1991-10-01), Barnett et al.
patent: 5132145 (1992-07-01), Valentian
patent: 5422500 (1995-06-01), Tomikawa et al.
patent: 5464950 (1995-11-01), Horiuchi et al.
patent: 5745990 (1998-05-01), Lee et al.
C.S. Choi, et al. "Optimization and Characterization of LPCVD TiB.sub.2 for ULSI Applications" J. Electrochem. Soc. V. 138 No. 10, pp. 3053-3061, Oct. 1991.
Everhart Caridad
Micro)n Technology, Inc.
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