Method of forming an avalanche semiconductor photo-detector devi

Details Method of forming an avalanche semiconductor photo-detector devi Method of forming an avalanche semiconductor photo-detector devi

1986-06-09

1988-02-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 437128, 437133, 437143, 437184, 437969, 357 30, H01L 29167, H01L 2714, H01L 2990

Patent

active

047229071

ABSTRACT:
An avalanche photodetector of the heterojunction type comprises an intermediate region between two end regions made from distinct semiconductor materials. The intermediate region comprises a lattice of slices of varying thicknesses of alternating layers of the material of the end regions thus forming a system of coupled quantum wells whose thicknesses and whose number of slices are determined so that the response time of the photodetector is less than a maximum given time, while maintaining the number of coupled quantum wells to a minimum.

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F. Capasso, et al., "Pseudo-Quaternary GalnAsp Semiconductors: A New Ga.sub.0.47 In.sub.0.53 As/InP Graded Gap Superlattice and Its Applications to Avalance Photodiodes," Applied Physics Letters, 45 (11) Dec. 1, 1984, pp. 1193-1195.
F. Capasso, "Multilayer Avalanche Photodiodes and Solid-State Photomultipliers," Lasers Focus/Electro-Optics, Jul. 20, 1984, No. 7, pp. 84, 86, 88, 90, 92, 94, 96, 98, 100 and 101.

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