Method of forming an antifuse

Details Method of forming an antifuse Method of forming an antifuse

1992-09-29

1993-09-28

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437192, 437 59, 437 8, 437922, 148DIG55, 257530, H01L 2144, H01L 2148

Patent

active

052486320

ABSTRACT:
An antifuse (42) is formed by forming a layer of titanium tungsten (34) overlying a portion of a first metal layer (28). The titanium tungsten layer (34) is oxidized to form a film of oxide (36) on its surface. Insulating regions (30) are formed adjacent the titanium tungsten layer (34) and overlying the first metal layer (28). A second metal layer (40) is formed overlying the titanium tungsten layer (34). Applying a break down voltage across the first and second metal layers (28), (40) will break down the oxide film (36), thereby causing a connection between the first and second metal layers (28), (40).

REFERENCES:
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4914055 (1990-04-01), Gordon et al.
patent: 5015604 (1991-05-01), Lim et al.
patent: 5106773 (1992-04-01), Chen et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5181096 (1993-01-01), Forouhi
Hamdy, et al., "Dielectric, Based Antifuse for Logic and Memory ICS" IEEE, 1988, CH 528-8188/0000-0986, pp. 786-IEDM 88 to IEDM 88-789.
Sato, et al., "A New Programmable Cell Utilizing Insulator Breakdown," IEEE, 1985, CH2252-5/85/0000-0639, pp. IEDM 85-639 to 642-IEDM 85.

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