Method of forming an AlN coated heterojunction field effect...

Details Method of forming an AlN coated heterojunction field effect... Method of forming an AlN coated heterojunction field effect...

2001-05-15

2009-11-24

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S172000, C438S191000, C438S235000

Reexamination Certificate

active

07622322

ABSTRACT:
A passivation layer of AlN is deposited on a GaN channel HFET using molecular beam epitaxy (MBE). Using MBE, many other surfaces may also be coated with AlN, including silicon devices, nitride devices, GaN based LEDs and lasers as well as other semiconductor systems. The deposition is performed at approximately 150° C. and uses alternating beams of aluminum and remote plasma RF nitrogen to produce an approximately 500 Å thick AlN layer.

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Araki, T., et al., “Structural Analysis of AlN Films Grown on SiC Substrate by RF-MBE and RF-MEE”,Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, (Sep. 24, 2000), pp. 194-197.

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